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| QS6U24 Transistor Small switching (-30V, -1A) QS6U24 !Features 1) The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resisternce with a fast switching. 3) Pch Treueh MOSFET is neucted a low voltage drive (4V). 4) The independently connected Schottky barrier diode have a low forward voltage. !External dimensions (Units : mm) TSMT6 1pin mark 2.8 1.6 (1) (6) (4) (5) 0.4 (1)Anode (2)Source (3)Gate (4)Drain (5)N/C (6)Cathode 0.16 (3) (2) Each lead has same dimensions Abbreviated symbol : U24 !Applications load switch, DC/DC conversion !Equivalent circuit !Structure Silicon P-channel MOS FET Schottky Barrier DIODE (6) (5) (4) 2 !Packaging specifications Package Type QS6U24 Code Basic ordering unit (pieces) Taping TR 3000 (1) 1 ESD protection diode 2 Body diode (2) 1 (3) (1)Anode (2)Source (3)Gate (4)Drain (5)N/C (6)Cathode A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. !Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP Tch Symbol VRM VR IF IFSM Tj Symbol PD Tstg Limits -30 20 1.0 2.0 -0.3 -1.2 150 Limits 25 20 0.7 3.0 125 Limits 1.0 -40~+125 Unit V V A A 1 A A 1 C Unit V V A A 2 C Unit W/Total 3 C Channel temperature Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Parameter Total power dissipatino Range of strage temperature 1 Pw10s, Duty cycle1% 2 60Hz*1cyc. 3 Total mounted on a ceramic board 0.85 2.9 1/3 QS6U24 Transistor !Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. - - - - 300 500 600 - 90 25 16 9 7 18 7 1.7 0.6 0.4 Max. 10 - -1 -2.5 400 700 800 - - - - - - - - - - - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS -30 IDSS - Zero gate voltage drain current VGS (th) -1.0 Gate threshold voltage - Static drain-source on-starte - RDS (on) resistance - 0.5 Yfs Forward transfer admittance Ciss - Input capacitance Coss - Output capacitance - Crss Reverse transfer capacitance td (on) - Turn-on delay time tr - Rise time - td (off) Turn-off delay time tf - Fall time Qg - Total gate charge Qgs - Gate-source charge Qgd - Gate-drain charge Pulsed Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=-1mA, VGS=0V VDS=-30V, VGS=0V VDS=-10V, ID=-1mA ID=-1A, VGS=-10V ID=-0.5A, VGS=-4.5V ID=-0.5A, VGS=-4V VDS=-10V, ID=-0.5A VDS=-10V VGS=0V f=1MHz ID=-0.5A VDD -15V VGS=-10V RL=30 RGS=10 VDD -15V VGS=-5V ID=-1.0A !Body diode (Source-drain) Parameter Forward voltage Symbol VSD Symbol VF IR Min. - Min. - - Typ. - Typ. - - Max. -1.2 Max. 0.49 200 Unit V Unit V A Conditions IS=-0.3A, VGS=0V Conditions IF=0.7A VR=20V Parameter Forward voltage drop Reverse leakage !Electrical characteristic curves 10 1 Ta=125C Ta=75C Ta=25C Ta=-25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) VDS=-10V Pulsed 10000 VGS=-10V Pulsed 10000 VGS=-4.5V Pulsed DRAIN CURRENT : -ID (A) 0.1 1000 Ta=125C Ta=75C Ta=25C Ta=-25C 1000 Ta=125C Ta=75C Ta=25C Ta=-25C 0.01 0.001 1 1.5 2 2.5 3 3.5 4 4.5 5 100 0.1 1 10 100 0.1 1 10 GATE-SOURCE VOLTAGE : -VGS (V) DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) Fig.1 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10000 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current () 1200 1100 1000 900 800 700 600 500 400 300 200 0 2 4 6 8 10 12 14 16 ID=-1.2A ID=-0.6A Fig.3 Static Drain-Source On-State Resistance vs. Drain Current () 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 Ta=125C Ta=75C Ta=25C Ta=-25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) VGS=-4V Pulsed Ta=25C Pulsed Ta=25C Pulsed 1000 VGS=-4.0V VGS=-4.5V VGS=-10V 100 0.1 1 10 100 0.1 1 10 DRAIN CURRENT : -ID (A) GATE-SOURCE VOLTAGE : -VGS (V) DRAIN CURRENT : -ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current () Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) 2/3 QS6U24 Transistor REVERCE DRAIN CURRENT : -IDR (A) 10 VGS=0V Pulsed 1000 Ta=25C f=1MHZ VGS=0V 1000 Ta=25C VDD=-15V VGS=-10V RG=10 Pulsed 1 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=125C Ta=75C Ta=25C Ta=-25C 100 tf td(off) 10 100 Ciss 0.1 td(on) tr 1 0.01 Coss Crss 0.01 0 0.5 1 1.5 2 10 0.01 0.1 1 10 100 0.1 1 10 SOURCE-DRAIN VOLTAGE : -VSD (V) DRAIN-SOURCE VOLTAGE : -VDS (V) DRAIN CURRENT : -ID (A) Fig.7 Reverse Drain Current vs. Source-Drain Voltage Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Switching Characteristics 8 GATE-SOURCE VOLTAGE : VGS (V) 7 6 5 4 3 2 1 0 Ta=25C VDD=-15V ID=-1.2A RG=10 Pulsed 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics !Measurement circuits Pulse Width VGS ID RL D.U.T. RG VDD VDS td(on) ton 90% tr td(off) toff 90% tr 10% VDS VGS 10% 50% 90% 50% 10% Fig.11 Switching Time Measurement Circuit Fig.12 Switching Waveforms VG VGS ID RL IG(Const) D.U.T. RG VDD VDS VGS Qgs Qgd Qg Charge Fig.13 Gate Charge Measurement Circuit Fig.14 Gate Charge Waveforms 3/3 This datasheet has been download from: www..com Datasheets for electronics components. |
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